Issues »  Volume 37, Issue 3

Magnetic Tunnel Contacts Based on Heusler Fe$_{2}$MnGa Alloy

Yu. V. Kudryavtsev$^{1}$, V. M. Uvarov$^{1}$, J. Dubowik$^{2}$, Yu. B. Skirta$^{3}$

$^{1}$G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine
$^{2}$Institute of Molecular Physics PAN, ul. Mariana Smoluchowskiego 17, 60-179 Poznań, Poland
$^{3}$Institute of Magnetism under NAS and MES of Ukraine, 36b Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine

Received: 25.11.2014; final version - 29.01.2015. Download: PDF

Magnetic tunnel junctions (MTJ) with Heusler Fe$_{2}$MnGa-alloy and Ni$_{80}$Fe$_{20}$-alloy films as ferromagnetic electrodes and MgO-films as barrier layer are fabricated and investigated. As shown, the structure of Fe$_{2}$MnGa-alloy films effects significantly on the tunnel magnetoresistance value. Obtained values of tunnel magnetoresistance (4—20\%) at 293 K open the perspectives of practical applications of such MTJ as magnetic-field sensors.

Key words: magnetic properties, magnetoresistance, magnetic tunnel contacts, metallic heterostructures, thin films.

URL: http://mfint.imp.kiev.ua/en/abstract/v37/i03/0305.html

DOI: https://doi.org/10.15407/mfint.37.03.0305

PACS: 68.65.Ac, 71.20.Be, 73.40.Rw, 75.47.Np, 75.50.Bb, 75.70.Cn, 85.75.Ss

Citation: Yu. V. Kudryavtsev, V. M. Uvarov, J. Dubowik, and Yu. B. Skirta, Magnetic Tunnel Contacts Based on Heusler Fe$_{2}$MnGa Alloy, Metallofiz. Noveishie Tekhnol., 37, No. 3: 305—316 (2015) (in Ukrainian)

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