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Issues »  Volume 37, Issue 3

Magnetic Tunnel Contacts Based on Heusler Fe2MnGa Alloy

Yu. V. Kudryavtsev1, V. M. Uvarov1, J. Dubowik2, Yu. B. Skirta3

1G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine
2Institute of Molecular Physics PAN, ul. Mariana Smoluchowskiego 17, 60-179 Poznań, Poland
3Institute of Magnetism under NAS and MES of Ukraine, 36b Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine

Received: 25.11.2014; final version - 29.01.2015. Download: PDF

Magnetic tunnel junctions (MTJ) with Heusler Fe2MnGa-alloy and Ni80Fe20-alloy films as ferromagnetic electrodes and MgO-films as barrier layer are fabricated and investigated. As shown, the structure of Fe2MnGa-alloy films effects significantly on the tunnel magnetoresistance value. Obtained values of tunnel magnetoresistance (4—20\%) at 293 K open the perspectives of practical applications of such MTJ as magnetic-field sensors.

Key words: magnetic properties, magnetoresistance, magnetic tunnel contacts, metallic heterostructures, thin films.

URL: http://mfint.imp.kiev.ua/en/abstract/v37/i03/0305.html

DOI: https://doi.org/10.15407/mfint.37.03.0305

PACS: 68.65.Ac, 71.20.Be, 73.40.Rw, 75.47.Np, 75.50.Bb, 75.70.Cn, 85.75.Ss

Citation: Yu. V. Kudryavtsev, V. M. Uvarov, J. Dubowik, and Yu. B. Skirta, Magnetic Tunnel Contacts Based on Heusler Fe2MnGa Alloy, Metallofiz. Noveishie Tekhnol., 37, No. 3: 305—316 (2015) (in Ukrainian)

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