Influence of Sublayers of Germanium on Charge Transfer in Films of Chromium of Nanometre Thickness

R. I. Bihun$^{1}$, V. M. Gavrylyukh$^{1}$, B. P. Koman$^{1}$, Ya. A. Pastyrskyy$^{1}$, Z. V. Stasyuk$^{1}$, D. S. Leonov$^{2}$

$^{1}$Ivan Franko National University of Lviv, 50 Dragomanova Str., 79005 Lviv, Ukraine
$^{2}$Technical Center NAS of Ukraine, 13 Pokrovs’ka Str., 04070 Kyiv, Ukraine

Received: 15.07.2016. Download: PDF

Conductivity—size dependences of chromium films with thickness d < 50 nm fabricated under ultrahigh vacuum conditions on both the surface of glass and the surface of glass predeposited with germanium underlayers are quantitatively described by quasi-classical and quantum size effects’ theories. The experimental data are agreed with theoretical calculations taking into account the structure and surface-morphology peculiarities of thin metal films. The charge transport parameters of experimental samples are calculated.

Key words: metal thin films, surface and grain boundary scatterings, semiconductor sublayers of subatomic thickness.

URL: http://mfint.imp.kiev.ua/en/abstract/v38/i09/1167.html

DOI: https://doi.org/10.15407/mfint.38.09.1167

PACS: 72.10.Fk, 73.23.Ad, 73.25.+i, 73.50.Bk, 73.61.At, 73.63.Bd, 81.15.Kk, 85.40.Xx

Citation: R. I. Bihun, V. M. Gavrylyukh, B. P. Koman, Ya. A. Pastyrskyy, Z. V. Stasyuk, and D. S. Leonov, Influence of Sublayers of Germanium on Charge Transfer in Films of Chromium of Nanometre Thickness, Metallofiz. Noveishie Tekhnol., 38, No. 9: 1167—1177 (2016) (in Ukrainian)


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