Electrical Resistivity of the Y(Ga,Al)$_2$, Y(Ga,Si)$_2$ and Y(Ga,Ge)$_2$ Solid Solutions with Structure of AlB$

Issues » Volume 39, Issue 10

Electrical Resistivity of the Y(Ga,Al)$_2$, Y(Ga,Si)$_2$ and Y(Ga,Ge)$_2$ Solid Solutions with Structure of AlB$_2$ Type

M. P. Semen’ko, N. M. Bilyavina, O. I. Nakonechna

Taras Shevchenko National University of Kyiv, 60 Volodymyrska Str., UA-01033 Kyiv, Ukraine

Received: 12.01.2017; final version - 26.09.2017. Download: PDF

Electrical properties (resistivity and temperature coefficient of resistivity) of the Y(Ga,Al)$_2$, Y(Ga,Si)$_2$ and Y(Ga,Ge)$_2$ solid solutions are studied using the model coatings deposited on mica substrate. Analysis of temperature dependences of the resistivity reveals that YGa$_2$ compound as well as the solid solutions on its base possess a metallic conductivity. Substitution of a certain part of the gallium atoms in YGa$_2$ compound belonging to AlB$_2$-type structure with germanium, silicon or aluminium atoms leads to decrease of resistivity in the Ga $\to$ Ge $\to$ Si $\to$ Al series that may be caused by both the nature of atoms themselves and technological parameters of coatings’ preparation (primarily, by their homogeneity).

Key words: intermetallics, electrical properties, crystal structure, x-ray diffraction.

URL: http://mfint.imp.kiev.ua/en/abstract/v39/i10/1299.html

DOI: https://doi.org/10.15407/mfint.39.10.1299

PACS: 61.05.cp, 61.66.Dk, 68.37.Hk, 72.15.Eb, 73.61.At, 81.15.Ef, 81.40.Rs

Citation: M. P. Semen’ko, N. M. Bilyavina, and O. I. Nakonechna, Electrical Resistivity of the Y(Ga,Al)$_2$, Y(Ga,Si)$_2$ and Y(Ga,Ge)$_2$ Solid Solutions with Structure of AlB$_2$ Type, Metallofiz. Noveishie Tekhnol., 39, No. 10: 1299—1306 (2017)

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