Influence of Atmospheric Oxygen on Composition and Kinetic Properties of Thin Films of Bismuth

M. V. Dobrotvorska$^{1}$, D. S. Orlova$^{2}$, O. I. Rogachova$^{2}$, O. G. Fedorov$^{1}$

$^{1}$Institute for Single Crystals, NAS of Ukraine, 60 Nauky Ave., 61178 Kharkiv, Ukraine
$^{2}$National Technical University ‘Kharkiv Polytechnic Institute’, 21 Kyrpychov Str., 61002 Kharkiv, Ukraine

Received: 12.09.2017. Download: PDF

The effect of air oxidation on the composition and properties of bismuth films with thicknesses $d$ = 10–200 nm is studied by using X-ray photoelectron spectroscopy and measuring electrical and galvanomagnetic properties of the films. The properties of two sets of freshly prepared films (with a protective EuS layer and without it) are compared with the properties of the same films after long-term air storage (during 9 years) at room temperature. As determined, a non-uniform in depth oxidation with the Bi$_2$O$_3$ formation takes place in the Bi films without protective covering. At the same time, the values of the Hall coefficient $R_H$ and magnetoresistance $\Delta\rho/\rho$ as well as their temperature dependences are not practically changed after air storage, whereas electrical conductivity $\sigma$ is decreased. For the thinner films, the more significant decrease in $\sigma$ is observed. On the other hand, after long-term air storage, in the films covered by europium sulphide, Bi is presented only in the metallic state, and $\sigma$, $R_H$ and $\Delta\rho/\rho$ remain practically changeless. As follows from the obtained results, in the case of presence of the protective covering, even long-term air storage at room temperature does not lead to a change either in the chemical composition or in the kinetic properties of bismuth films.

Key words: bismuth films, bismuth oxide, oxidation, electrical conductivity, Hall coefficient, magnetoresistance, X-ray photoelectron spectroscopy.

URL: http://mfint.imp.kiev.ua/en/abstract/v39/i10/1307.html

DOI: https://doi.org/10.15407/mfint.39.10.1307

PACS: 64.75.Lm, 73.50.Jt, 73.50.Lw, 73.61.At, 75.47.Np, 81.07.Bc, 81.65.Mq

Citation: M. V. Dobrotvorska, D. S. Orlova, O. I. Rogachova, and O. G. Fedorov, Influence of Atmospheric Oxygen on Composition and Kinetic Properties of Thin Films of Bismuth, Metallofiz. Noveishie Tekhnol., 39, No. 10: 1307—1319 (2017) (in Russian)


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