The present work demonstrates that hydrogen treatment is capable to destroy and to split the surface of silicon single crystal. Hydrogen treatment is performed after the proton irradiation of the silicon surface. All operations with the silicon single crystal are performed at room temperature. The surface of the crystal is irradiated with a proton beam. The proton energy in the beam is 1.5 MeV. The energy spread did not exceed 150 eV. The integral radiation fluence is 2$\cdot10^{14}$ p/cm$^2$. Such a dose of radiation is sufficient to form a thin layer with a high density of radiation defects at a depth of 30 $\mu$m under the surface. The existence of this thin layer is confirmed after chemical manifestation by observations on the electron microscope. After irradiation, an electrolytic saturation of the silicon sample with hydrogen is carried out through the irradiated surface. During electrolysis, the irradiated surface of the sample uses as a cathode and the graphite electrode—as an anode. The solution of 10% H$_2$SO$_4$ and 2% KF in water is used for electrolysis. The electrolytic current density is 57.15 mA/cm$^2$. After 10 minutes of electrolytic saturation of the sample with hydrogen, part of the sample is split. A portion of the irradiated sample is split along the layer with a high density of radiation defects.