Issues »  Volume 48, Issue 5

Young’s Modulus of Sub-10 nm MgO Films via the Tunnelling-Current Nanoindenter Method

V. O. Burlakov, O. V. Filatov

G. V. Kurdyumov Institute for Metal Physics, N.A.S. of Ukraine, 36 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine

Received: 10.04.2026; final version - 20.04.2026. Download: PDF

A novel method for determining the elastic properties of ultrathin dielectric films based on conductive-tip nanoindentation is applied. The approach enables the extraction of film deformation from variations in tunnelling current, thereby, eliminating contributions from the substrate, indenter, and instrument compliance. A 6 nm MgO film deposited on a Fe film is investigated as a model system. The load–displacement curve is calculated from the obtained data of tunnel current, allowing evaluation of the Young’s modulus. The measured modulus of the MgO film is of ≅ 180 GPa, which is lower than bulk values and is attributed to reduced density and structural features of the deposited film. Repeated indentation results in an apparent increase in the Young’s modulus up to ≅ 380 GPa, associated with densification and reduced porosity. The applied method provides a high-resolution approach for measuring the mechanical properties of dielectric films with thicknesses below 10 nm.

Key words: nanofilms, Young’s modulus, mechanical properties, magnesium oxide MgO, nanoindentation, tunnelling current.

URL: https://mfint.imp.kiev.ua/en/abstract/v48/i05/0527.html

DOI: https://doi.org/10.15407/mfint.48.05.0527

PACS: 07.10.Cm, 62.20.de, 62.25.-g, 73.40.Gk, 73.40.Rw, 77.55.+f, 81.70.Bt

Citation: V. O. Burlakov and O. V. Filatov, Young’s Modulus of Sub-10 nm MgO Films via the Tunnelling-Current Nanoindenter Method, Metallofiz. Noveishie Tekhnol., 48, No. 5: 527–536 (2026)

REFERENCES
  1. T. D. Frazer, J. L. Knobloch, J. N. Hernández-Charpak, K. M. Hoogeboom-Pot, D. Nardi, S. Yazdi, W. Chao, E. H. Anderson, M. K. Tripp, S. W. King, H. C. Kapteyn, M. M. Murnane, and B. Abad, Phys. Rev. Mater., 4: 073603 (2020).
  2. M. Bibes, J. E. Villegas, and A. Barthélémy, Adv. Phys., 60, Iss. 1: 5 (2011).
  3. H. H. Radamson, X. He, Q. Zhang, J. Liu, H. Cui, J. Xiang, Z. Kong, W. Xiong, J. Li, J. Gao, H. Yang, S. Gu, X. Zhao, Y. Du, J. Yu, and G. Wang, Micromachines, 10, Iss. 5: 293 (2019).
  4. J.-H. Kim, H.-J. Kil, S. Lee, J. Park, and J.-W. Park, ACS Omega, 7, Iss. 29: 25219 (2022).
  5. Z. Zhao, H. Fu, R. Tang, B. Zhang, Y. Chen, and J. Jiang, Int. J. Smart Nano Mater., 14, Iss. 4: 510 (2023).
  6. J. Moser, J. Güttinger, A. Eichler, M. J. Esplandiu, D. E. Liu, M. I. Dykman, and A. Bachtold, Nature Nanotechnol., 8: 493 (2013).
  7. Y. T. Yang, C. Callegari, X. L. Feng, K. L. Ekinci, and M. L. Roukes, Nano Lett., 6, Iss. 4: 583 (2006).
  8. M. Li, H. X. Tang, and M. L. Roukes, Nature Nanotechnol., 2: 114 (2007).
  9. P. X.-L. Feng, 2020 IEEE 33rd Int. Conf. Micro Electro Mech. Syst. (MEMS), p. 212 (2020).
  10. L. G. Zhou and H. Huang, Appl. Phys. Lett., 84: 1940 (2004).
  11. R. J. Wang, C. Y. Wang, and Y. T. Feng, Int. J. Mech. Sci., 130: 267 (2017).
  12. C. Cheng, P. S. Grant, and L. Lührs, Adv. Electron. Mater., 6, Iss. 1: 1900364 (2020).
  13. C. Q. Sun, Prog. Solid State Chem., 35, Iss. 1: 1 (2007).
  14. W. Xia and S. Keten, J. Mater. Res., 30: 36 (2015).
  15. B. Gong, Q. Chen, and D. Wang, Mater. Lett., 67: 165 (2012).
  16. Z. Ao and S. Li, Nanoscale Res. Lett., 6: 243 (2011).
  17. K. Meganathan, G. Mangamma, M. J. Swaminadhan, V. Murugan, N. B. Shinde, S. Ghosh, and S. K. Eswaran, J. Phys. Chem. Lett., 15, Iss. 15: 4206 (2024).
  18. B. Dieny, I. L. Prejbeanu, K. Garello, P. Gambardella, P. Freitas, R. Lehndorff, W. Raberg, U. Ebels, S. O. Demokritov, J. Akerman, A. Deac, P. Pirro, C. Adelmann, A. Anane, A. V. Chumak, A. Hirohata, S. Mangin, M. C. Onbaşlı, M. d’Aquino, G. Prenat, G. Finocchio, L. Lopez Diaz, R. Chantrell, O. Chubykalo-Fesenko, and P. Bortolotti, Nature Electron., 3: 446 (2020).
  19. V. Burlakov, O. Filatov, and O. Pogorelov, phys. status solidi (b), 258, Iss. 4: 2000502 (2021).
  20. V. O. Burlakov, O. E. Pogorelov, and O. V. Filatov, Metallofiz. Noveishie Tekhnol., 42, No. 7: 919 (2020) (in Ukrainian).
  21. R. Lewandków, M. Grodzicki, P. Mazur, and A. Ciszewski, Acta Phys. Pol. A, 141, No. 2: 116 (2022).
  22. L. M. Kandpal, B. Taudul, E. Monteblanco, A. Kumar, K. Katcko, F. Schleicher, P. Gupta, S. Boukari, W. Weber, V. Da Costa, J. D. Costa, T. Bӧhnert, R. Ferreira, P. Freitas, M. Hehn, M. Alouani, P. K. Muduli, D. Lacour, and M. Bowen, npj Spintronics, 3: 2 (2025).
  23. V. O. Burlakov and O. V. Filatov, Progress in Physics of Metals, 26, No. 4: 968 (2025).
  24. J. N. Hernandez-Charpak, K. M. Hoogeboom-Pot, Q. Li, T. D. Frazer, J. L. Knobloch, M. Tripp, S. W. King, E. H. Anderson, W. Chao, M. M. Murnane, H. C. Kapteyn, and D. Nardi, Nano Lett., 17, Iss. 4: 2178 (2017).
  25. K. Geng, F. Yang, and E. A. Grulke, Mater. Sci. Eng. A, 479, Iss. 1–2: 157 (2008).
  26. J. Hay and B. Crawford, J. Mater. Res., 26: 727 (2011).
  27. R. Dingreville, J. Qu, and M. Cherkaoui, J. Mech. Phys. Solids, 53, Iss. 8: 1827 (2005).
  28. A. I. Fedorchenko, A. B. Wang, and H. H. Cheng, Appl. Phys. Lett., 94: 151904 (2009).
  29. W. C. Oliver and G. M. Pharr, J. Mater. Res., 7: 1564 (1992).
  30. J. G. Simmons, J. Appl. Phys., 34, Iss. 6: 1793 (1963).
  31. V. O. Burlakov, O. Ye. Pohorelov, and O. V. Filatov, Metallofiz. Noveishie Tekhnol., 45, No. 2: 157 (2023).
  32. II–VI and I–VII Compounds; Semimagnetic Compounds (Eds. O. Madelung, U. Rössler, and M. Schulz) (Berlin: Springer: 1999).
  33. J. J. Swica and W. B. Crandall, J. Am. Ceram. Soc., 48, Iss. 2: 102 (1965).
  34. D. Chung, J. J. Swica, and W. B. Crandall, J. Am. Ceram. Soc., 46, Iss. 9: 452 (1963).

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