Sol—gel SrBi$_{2}$Ta$_{2}$O$_{9}$ films (SBT films) are synthesized and their properties are investigated. Sol—gel SBT films are layered by centrifugation with following heat treatment of each layer at the temperature of 300°C during 5 minutes. Monocrystalline silicon with a platinum sublayer is used as a substrate. The results of X-ray studies show that, in the fabrication of SBT films by sol—gel method, the perovskite-phase formation begins at 700°C, and it is completed at 750—800°C. During the heat treatment at 750°C in oxygen atmosphere, more uniform distribution of the grain sizes over the surface is observed by atomic force microscopy. Sol—gel SBT films annealed at 750°C for 60 minutes have the dielectric constant maximum at 100 Hz at the Curie temperature $T_{K}$ = 300—370°C, showing the ferroelectric transitions in the paraelectric phase.