Negative $N$-Type Differential Resistance in Current–Voltage Characteristics of Metal Heterostructures

V. V. Shamaev$^{1}$, O. S. Zhitlukhina$^{2,3}$

$^{1}$Donetsk National Technical University, 2 Shybankov Sqr., UA-85300 Pokrovs’k, Ukraine
$^{2}$Vasyl’ Stus Donetsk National University, 21 600-richchya Str., UA-21021 Vinnytsia, Ukraine
$^{3}$Donetsk Institute for Physics and Engineering Named after O. O. Galkin, NAS of Ukraine, 46 Nauky Ave., UA-03028 Kyiv, Ukraine

Received: 28.03.2018; final version - 08.05.2018. Download: PDF

Physical mechanism is proposed and responsible for the appearance of a negative $N$-type differential resistance region in current–voltage characteristics of metal heterostructures with a tunnel barrier formed by a semiconductor interlayer with embedded impurity centres. The theory developed in this work is based on the assumption of the presence of localized two-level structures in the potential barrier, which determine the magnitude of the current flowing through the corresponding transport channel. An effect of the problem parameters on the tunnel current is analysed.

Key words: negative differential resistance, negatron, two-level centres, tunnel current.



PACS: 64.60.ah, 72.20.Dp, 72.80.Tm, 73.40.Gk, 73.40.Rw, 73.50.Fq, 81.05.Zx

Citation: V. V. Shamaev and O. S. Zhitlukhina, Negative $N$-Type Differential Resistance in Current–Voltage Characteristics of Metal Heterostructures, Metallofiz. Noveishie Tekhnol., 40, No. 6: 729—737 (2018) (in Russian)

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