Formation, Structural, Morphological Characteristics and Sensor Properties of ZnO/CuO Nanosystems

A. S. Kornyushchenko, V. V. Natalich, V. I. Perekrestov

Sumy State University, 2 Rymsky-Korsakov Str., UA-40007 Sumy, Ukraine

Received: 13.06.2018; final version - 12.03.2019. Download: PDF

Peculiarities of ZnO/CuO nanowire systems formation with network morphology and their sensor properties with respect to LPG (Liquefied Natural Gas), CO$_2$ and CO$_2$ + LPG are studied in the work. The processes of oxidation of the initial zinc nanosystems in the atmosphere under different temperatures and initial heating rates are determined. The main optimization parameter is the ability of final oxide nanosystems to register different gaseous reagents. As established, the recording of current-voltage characteristics with strict velocities of the voltage change allows to obtain an extending data required to distinguish between different reagents. At the same time, comprehensive research of structural, morphological characteristics and charge transfer mechanisms are shown that capacity of ZnO/CuO nanosystems is determined mainly by fluctuations of ZnO nanosystems thickness. The presence of CuO component increases sensor sensitivity in some cases.

Key words: ZnO/CuO nanosystems, sensor properties, current-voltage characteristic, charge transfer, reactive gas.

URL: http://mfint.imp.kiev.ua/en/abstract/v41/i07/0953.html

DOI: https://doi.org/10.15407/mfint.41.07.0953

PACS: 68.35.bg, 68.47.Gh, 68.55.-a, 68.55.J-, 81.15.Rs, 82.47.Rs, 84.37.+q

Citation: A. S. Kornyushchenko, V. V. Natalich, and V. I. Perekrestov, Formation, Structural, Morphological Characteristics and Sensor Properties of ZnO/CuO Nanosystems, Metallofiz. Noveishie Tekhnol., 41, No. 7: 953—963 (2019) (in Ukrainian)


REFERENCES
  1. L.-C. Chao, S. Y. Tsai, C.-N. Lin, C.-C. Liau, and C.-C. Ye, Mater. Sci. Semicond. Process., 16, Iss. 5: 1316 (2013). Crossref
  2. O. F. Farhat, M. M. Halim, M. J. Abdullah, M. K. M. Ali, N. M. Ahmed, and M. Bououdina, Superlattices and Microstruct., 86: 236 (2015). Crossref
  3. M. Girtan, G. G. Rusu, S. Dabos-Seignon, and M. Rusu, Appl. Surf. Sci., 254, Iss. 13: 4179 (2008). Crossref
  4. S. Kim, M.-C. Jeong, B.-Y. Oh, W. Lee, and J.-M. Myoung, J. Cryst. Growth., 290, Iss. 2: 485 (2006). Crossref
  5. H.-Q. Liang, L.-Z. Pan, and Z.-J. Liu, Mater. Lett., 62, Iss. 12-13: 1797 (2008). Crossref
  6. Y. Liu, C. Pan, Y. Dai, and W. Chen, Mater. Lett., 62, Iss. 17-18: 2783 (2008). Crossref
  7. A. S. Kornyushchenko, V. I. Perekrestov, and Y. O. Rybalko. J. Nano- Electron. Phys., 10, Iss. 1: 01021 (2018). Crossref
  8. R. Muller, Sensors: a Comprehensive Survey (Eds. W. Göpel, J. Hesse, and C. N. Zemel) (Berlin: Wiley-VCH: 1989), vol. 1, p. 314.
  9. J. J. Chen, K. Wang, and W. L. Zhou, IEEE Trans. Nanotechnol., 10, Iss. 5: 968 (2011). Crossref
  10. E. J. Wolfrum, R. M. Meglen, D. Peterson, and J. Sluiter, Sens. Actuators, B, 115, Iss. 1: 322 (2006). Crossref
  11. P.-C. Chen, F. N. Ishikawa, H.-K. Chang, K. Ryu, and C. Zhou, Nanotechnology, 20, Iss. 12: 125503 (2009). Crossref
  12. A. Star, V. Joshi, S. Skarupo, D. Thomas, and J.-C. P. Gabriel, J. Phys. Chem. B, 110, Iss. 42: 21014 (2006). Crossref
  13. T. Kunt, T. J. McAvoy, R. E. Cavicchi, and S. Semancik, Proc. of ADCHEM, 1997: 91 (1997). Crossref
  14. A. S. Kornyushchenko, A. H. Jayatissa, V. V. Natalich, and V. I. Perekrestov, Thin Solid Films, 604, Iss. 1: 48 (2016). Crossref
  15. J. Cao and J. Wu, Mater. Sci. Eng. R Rep., 71, Iss. 2-4: 35 (2011). Crossref
  16. V. M. Latyshev, V. I. Perekrestov, A. S. Kornyushchenko, and I. V. Zahaiko, Funct. Mater., 24, Iss. 1: 154 (2017). Crossref
  17. V. A. Moshnikov, I. E. Gracheva, V. V. Kuznezov, A. I. Maximov, S. S. Karpova, and A. A. Ponomareva, J. Non-Cryst. Solids, 356, Iss. 37-40: 2020 (2010). Crossref
  18. N. Nasiri, R. Bo, F. Wang, L. Fu, and A. Tricoli, Adv. Mat., 27, Iss. 29: 4336 (2015). Crossref
  19. J. Jose and M. A. Khadar, Nanostruct. Mater., 11, Iss. 8: 1091 (1999). Crossref
  20. H. Q. Ni, Y. F. Lu, Z. Y. Liu, H. Qiu, W. J. Wang, Z. M. Ren, S. K. Chow, and Y. X. Jie, Appl. Phys. Lett., 79: 812 (2001). Crossref