Dispersion Kinetics during Vacuum Annealing of Thin Double Hafnium-Palladium Films Deposited onto Oxide Ceramics Materials
I. I. Gab, T. V. Stetsyuk
I. M. Frantsevich Institute for Problems in Materials Science, NAS of Ukraine, 3 Academician Krzhyzhanovsky Str., UA-03142 Kyiv, Ukraine
Received: 02.04.2021. Download: PDF
The dispersion kinetics of hafnium-palladium thin double-films deposited onto leucosapphire, alumina and zirconia ceramics and annealed in vacuum at temperatures up to 1200°C at different exposure intervals at each temperature (from 5 to 20 min) is studied. The double-films consisted of two layers. The first one consists of metallized layer—hafnium nanofilms with 150 nm thickness deposited onto oxide surface. The second—palladium layer with 1.5 $\mu$m thickness is deposited onto first one and supposed to serve as a solder when the metallized oxide samples are joined together. As established, these films remain sufficiently dense when they are briefly (5 min) heated up to 1200°C, and after annealing time raising they intensively disperse. The kinetic curves of films decomposition on all oxides are built depending on the annealing temperature, and experimental samples of given oxides are fabricated by pressure welding and soldering using results of present investigation.
Key words: kinetics of disintegration, hafnium-palladium double-film, annealing, oxide material.
PACS: 68.35.bd, 68.37.Hk, 68.47.De, 68.55.J-, 81.20.Vj, 81.40.Ef
Citation: I. I. Gab and T. V. Stetsyuk, Dispersion Kinetics during Vacuum Annealing of Thin Double Hafnium-Palladium Films Deposited onto Oxide Ceramics Materials, Metallofiz. Noveishie Tekhnol., 43, No. 9: 1225—1234 (2021) (in Ukrainian)