Issues »  Volume 47, Issue 6

Development of a Highly-Efficient Cold-Cathode Ion Source for Ion Implantation

O. V. Kosulya$^{1}$, B. M. Romaniuk$^{1}$, O. S. Oberemok$^{1}$, V. A. Baturin$^{1}$, O. Yu. Roenko$^{2}$, S. O. Yeryomin$^{2}$, P. O. Litvinov$^{2}$

$^{1}$V. Ye. Lashkaryov Institute of Semiconductor Physics, N.A.S. of Ukraine, 41 Nauky Prosp., UA-03028 Kyiv, Ukraine
$^{2}$Institute of Applied Physics, N.A.S. of Ukraine, 58 Petropavlivska Str., UA-40000 Sumy, Ukraine

Received: 09.10.2024; final version - 04.06.2025. Download: PDF

This article describes the design of a highly-efficient ion source with a Penning-system cold cathode for ion implantation. The ion source is intended for receiving large currents (> 10 μA) from solid materials whose boiling point is higher than the melting point. The ion source on the BALZERS MPB-202 ion implanter is also tested.

Key words: ion implantation, ion source, ion implanter, metal ions, semiconductor structures.

URL: https://mfint.imp.kiev.ua/en/abstract/v47/i06/0575.html

DOI: https://doi.org/10.15407/mfint.47.06.0575

PACS: 29.20.Ej, 29.25.Lg, 29.25.Ni, 29.27.Ac, 41.75.Ak, 41.75.Cn, 61.72.U-

Citation: O. V. Kosulya, B. M. Romaniuk, O. S. Oberemok, V. A. Baturin, O. Yu. Roenko, S. O. Yeryomin, and P. O. Litvinov, Development of a Highly-Efficient Cold-Cathode Ion Source for Ion Implantation, Metallofiz. Noveishie Tekhnol., 47, No. 6: 575—580 (2025)

REFERENCES
  1. E. Rimini, Ion Implantation: Basics to Device Fabrication (New York: Springer: 2013).
  2. S. Sakai, N. Hamamoto, Y. Inouchi, S. Umisedo, and N. Miyamoto, Rev. Sci. Instrum., 85: 02C313 (2014).
  3. S.R. Walther, B.O. Pedersen,and C.M. McKenna, Proc. of Conference Record of the 1991 IEEE Particle Accelerator Conference (1991).
  4. V. A. Baturin, P. A. Litvinov, S. A. Pustovoitov, and O. Yu. Roenko, Problems of Atomic Science and Technology, 6: 99 (2021).
  5. V. A. Baturin, S. A. Yeryomin, S. A. Pustovoytov, P. A. Litvinov, A. Y. Karpenko, and V. I. Miroshnichenko, Problems of Atomic Science and Technology, 96, Iss. 2: 204 (2015).
  6. P. A. Litvinov, V. A. Baturin, and S. A. Pustovoytov, Journal of Technical Physics, 84, Iss. 4: (2014).
  7. https://www.atsdr.cdc.gov/csem/beryllium/docs/beryllium.pdf
  8. P. A. Litvinov and V. A. Baturin, Dzherelo Ioniv H− [H− Ion Source]: Patent No. UA 71164 A, 20031110165 (2004) (in Ukrainian).
  9. S. A. Pustovoytov, V. A. Baturin, S. A. Yeryomin, and A. J. Karpenko, Problems of Atomic Science and Technology, Iss. 4: 280 (2008).
  10. V. A. Baturin and S. A. Yeryomin, Journal of Nano- and Electronic Physics, 10, No. 4: 04021 (2018).

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