Issues »  Volume 36, Issue 7

Electronic Structure of Amorphous Metal Alloy Fe$_{77}$Si$_{8}$B$_{15}$

V. L. Karbovskii, O. G. Ilinskyi, V. Kh. Kasiyanenko, O. I. Slukhovskyi, Yu. V. Lepeeva, L. I. Karbovska, A. I. Sobolev

G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Blvd., UA-03680 Kyiv-142, Ukraine

Received: 29.11.2013; final version - 06.05.2014. Download: PDF

The electronic structure of amorphous metal alloy Fe$_{77}$Si$_{8}$B$_{15}$ is investigated by X-ray photoelectron spectroscopy and tunnelling spectroscopy methods. At the oxidized surface layer of the sample, in addition to C—C bonds, the C=O bonds are observed that is typical for complex carbon compounds. In contrast, boron and its compounds are not detected in the oxidized layer. A significant surface segregation of Si is observed with its concentration remaining constant within the oxidized layer and deep into the investigated tape. In the tape bulk, the presence of silicon carbide Si—C with minor amounts of oxygen and nitrogen is observed. By means of the tunnelling spectroscopy, low-conductivity areas are detected that is typical for the iron—silicon nanophase formation. Substantial inhomogeneities of electron density of states at the intercluster boundaries are observed that indicates their complex organization. Fermi level of the alloy is in a local minimum of electron density of states that meets the Nagel—Tauc criterion for amorphous state formation.

Key words: electronic structure, electron density of states, spectroscopy, amorphous alloy.

URL: http://mfint.imp.kiev.ua/en/abstract/v36/i07/0977.html

DOI: https://doi.org/10.15407/mfint.36.07.0977

PACS: 61.43.Dq, 61.66.Dk, 68.37.Ef, 71.23.Cq, 71.55.Jv, 79.60.Ht, 81.70.Jb

Citation: V. L. Karbovskii, O. G. Ilinskyi, V. Kh. Kasiyanenko, O. I. Slukhovskyi, Yu. V. Lepeeva, L. I. Karbovska, and A. I. Sobolev, Electronic Structure of Amorphous Metal Alloy Fe$_{77}$Si$_{8}$B$_{15}$, Metallofiz. Noveishie Tekhnol., 36, No. 7: 977—986 (2014) (in Russian)

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