Generation of the Al(111) Surface Defects under Influence of Low-Energy Ar$^{+}$ Ions
M. O. Vasylyev$^{1}$, I. M. Makeyeva$^{1}$, V. O. Tinkov$^{1}$, S. M. Voloshko$^{2}$
$^{1}$G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Blvd., UA-03680 Kyiv-142, Ukraine
$^{2}$National Technical University of Ukraine ‘KPI’, 37 Peremohy Ave., 03056 Kyiv, Ukraine
Received: 20.06.2014. Download: PDF
Dose dependence of generation and annealing of point defects induced by the bombardment of Al(111) single-crystal surface by Ar$^{+}$ ions with energy of 600 eV in extra-high vacuum is studied in detail using the method of low-energy electron diffraction. Possibility of analysis of changes in intensity of diffraction reflexes of slow electrons directly during ion bombardment that excludes annealing effect at subsequent holding at room temperature is shown. Based on analysis of diffraction reflexes, values of activation energy of point defects are obtained.
Key words: point defects, surface, single-crystal, ion bombardment, low-energy electron diffraction.
URL: http://mfint.imp.kiev.ua/en/abstract/v36/i10/1371.html
DOI: https://doi.org/10.15407/mfint.36.10.1371
PACS: 61.05.jh, 61.72.Cc, 61.72.Dd, 61.80.Jh, 61.82.Bg, 81.40.Ef, 81.40.Wx
Citation: M. O. Vasylyev, I. M. Makeyeva, V. O. Tinkov, and S. M. Voloshko, Generation of the Al(111) Surface Defects under Influence of Low-Energy Ar$^{+}$ Ions, Metallofiz. Noveishie Tekhnol., 36, No. 10: 1371—1384 (2014) (in Ukrainian)