Features of Change of Micromechanical Characteristics of Silicon Stimulated by the Combined Action of both Magnetic Field and Low Doses of X-Rays

L. P. Steblenko, А. M. Kuryliuk, S. M. Naumenko, Yu. L. Kobzar, O. M. Krit, D. V. Kalinichenko, P. О. Teselko, P. P. Kogutyuk

Taras Shevchenko National University of Kyiv, 64 Volodymyrska Str., 01601 Kyiv, Ukraine

Received: 27.03.2014. Download: PDF

The changes of micromechanical characteristics in silicon crystals stimulated by separate and combined actions of low-energy X-rays ($D = 10^{2}$ Gy) and weak ($В = 0.17$ Т) static magnetic field are investigated. As shown, the use of the combined influence of low-energy X-rays and a weak magnetic field leads to mutual annihilation of radiation-mechanical and magnetomechanical effects as opposed to individual action of these factors. These features are associated with the nature of dislocation—impurity interaction under separate and dual treatments.

Key words: silicon, structural defects, microhardness, X-rays, magnetic field.

URL: http://mfint.imp.kiev.ua/en/abstract/v36/i12/1695.html

DOI: https://doi.org/10.15407/mfint.36.12.1695

PACS: 61.72.Hh, 61.72.Yx, 61.80.Cb, 62.20.Qp, 71.55.Cn, 81.40.Rs, 81.40.Wx

Citation: L. P. Steblenko, А. M. Kuryliuk, S. M. Naumenko, Yu. L. Kobzar, O. M. Krit, D. V. Kalinichenko, P. О. Teselko, and P. P. Kogutyuk, Features of Change of Micromechanical Characteristics of Silicon Stimulated by the Combined Action of both Magnetic Field and Low Doses of X-Rays, Metallofiz. Noveishie Tekhnol., 36, No. 12: 1695—1700 (2014) (in Ukrainian)


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