Structural and mechanical characteristics of the damaged layer of heteroepitaxial Ag$_{2}$O/CdHgTe/CdZnTe structures after implantation of silver ions are presented within the scope of systematic X-ray diffraction investigations. Nature and role of mechanical stress of doping layer and the impact of strain on the redistribution of introduced impurities and defects are discussed. The generation of mechanical stresses in the CdHgTe (MCT) solid solution arising from the implantation introduction of impurity silver ions is considered as a source of transformation of defect—impurity structures and changes in the microstructure of the heteroepitaxial narrow-gap semiconductor film surface. As revealed, the effect of deformation retraction of impurities caused by dilatational effect may play a prominent role in formation of the impurity distribution profile. With application of the TRIM_2008 software package, the concentration values of implanted ions, $C(z)$, are calculated and used for further calculation of the maximal mechanical stresses. As determined, the silver admixture is mainly located in the surface region of epitaxial layer with the thickness of $\cong$ 0.1 $\mu$m, and the maximum of ion concentration ($\cong$ 10$^{24}$ m$^{-3}$) is achieved at the depth of $\cong$ 0.05 $\mu$m. Changes in relative microhardness of samples, $\eta$, are investigated as well. Analysis of structural changes in the surface layer of silver-implanted MCT-samples is performed by the XRD method in sliding configuration (GI XRD) at the grazing angle of 1°. For this material, near-surface region up to 400 nm contributes in the diffraction pattern. To determine the size of defects, intensity distribution of diffuse scattering in the $q_{x}$ direction is reconstructed and analysed. With the increase of the defects’ size, the narrowing of Huang-scattering domain is observed for the sample after silver implantation in comparison with the initial sample.