Issues »  Volume 39, Issue 6

Frequency Characteristics of Memristor Structures Based on the Complex Transition-Metal Oxides

V. V. Shamaev$^{1}$, E. S. Zhitlukhina$^{2,3}$

$^{1}$Donetsk National Technical University, 2 Shybankov Sqr., UA-85300 Pokrovs’k, Ukraine
$^{2}$Vasyl’ Stus Donetsk National University, 21 600-richchya Str., UA-21021 Vinnytsia, Ukraine
$^{3}$Donetsk Institute for Physics and Engineering Named after O.O. Galkin, NAS of Ukraine, 46 Nauky Ave., UA-03028 Kyiv, Ukraine

Received: 05.04.2017. Download: PDF

The frequency dependence of double-valued current–voltage characteristics of memristor structures formed by a metal counter-electrode and a complex transition-metal oxide film is analysed. The proposed theoretical model is based on the assumption of the diffusion of oxygen vacancies, the local concentration of which completely determines electrical characteristics of the metal-oxide compound. As shown, the increasing of frequency of the alternating current passed through a given contact decreases the ratio of its maximum resistance to the minimum value, while the influence of the vacancy-subsystem relaxation to the initial state is not significant in the case when the characteristic relaxation time substantially exceeds the period of the alternating current.

Key words: memristor, oxygen vacancies, hysteresis, frequency effect, relaxation impact.

URL: http://mfint.imp.kiev.ua/en/abstract/v39/i06/0733.html

DOI: https://doi.org/10.15407/mfint.39.06.0733

PACS: 61.72.jd, 62.23.St, 68.47.Gh, 73.40.Ns, 84.32.Dd, 84.32.Ff, 85.25.Hv

Citation: V. V. Shamaev and E. S. Zhitlukhina, Frequency Characteristics of Memristor Structures Based on the Complex Transition-Metal Oxides, Metallofiz. Noveishie Tekhnol., 39, No. 6: 733—742 (2017) (in Russian)

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