Growth and Properties of Thick Epitaxial Films of Yttrium–Ferrum Garnet

S. I. Yushchuk, S. O. Yuryev, O. B. Bilenka, O. M. Gorina

Lviv Polytechnic National University, 12 Bandera Str., 79013 Lviv, Ukraine

Received: 01.03.2018; final version - 01.03.2018. Download: PDF

The possibility to grow the yttrium–iron garnet (YIG) films with thickness more than 60 µm with the partial substitution of Y$^{3+}$ ions for La$^{3+}$ ions by the method of the liquid-phase epitaxy on substrates of single-crystalline gallium–gadolinium garnet (GGG) is shown. The introduction of La$^{3+}$ ions into the YIG crystal lattice allows to increase the lattice constant of ferrite film to a value typical for the GGG substrate, and thereby to eliminate the mechanical stresses in the film, which lead to the growth of magnetic loss. The requirements to the growth technical conditions, which allow obtaining thick single-crystalline films of high quality with a narrow line ($\Delta H$ = 0.6 E) of ferromagnetic resonance, are formulated.

Key words: garnet ferrite film, liquid-phase epitaxy, ferromagnetic resonance.

URL: http://mfint.imp.kiev.ua/en/abstract/v40/i09/1247.html

DOI: https://doi.org/10.15407/mfint.40.09.1247

PACS: 61.66.Fn, 75.50.-y, 75.70.-i, 76.50.+g, 85.70.Ge

Citation: S. I. Yushchuk, S. O. Yuryev, O. B. Bilenka, and O. M. Gorina, Growth and Properties of Thick Epitaxial Films of Yttrium–Ferrum Garnet, Metallofiz. Noveishie Tekhnol., 40, No. 9: 1247—1256 (2018) (in Ukrainian)


REFERENCES
  1. S. I. Yushchuk, S. A. Yuryev, P. S. Kostyuk, and V. I. Bondar, Tekhnologiya i Konstruirovanie v Elektronnoy Apparature, No. 3 (57): 22 (2005) (in Russian).
  2. L. V. Lutsev, A. M. Korovin, V. E. Bursian, S. V. Gastev, V. V. Fedorov, S. M. Suturin, and N. S. Sokolov, NASA Astrophysics Data System, No. 5: 1 (2016).
  3. A. Gurevich and G. Melkov, Magnitnye Kolebaniya i Volny [Magnetic Oscillations and Waves] (Moscow: Nauka: 1994) (in Russian).
  4. H. L. Glass, J. Cryst. Growth, 33, No. 1: 183 (1976). Crossref
  5. C. Borghese, P. De Gasperis, and R. Tappa, Solid State Comm., 25: 21 (1978). Crossref
  6. S. I. Yushchuk, Ukr. Fiz. Zhurn., 44, No. 9: 1099 (1999) (in Ukrainian).
  7. A. Balbashov and A. Chervonenkis, Magnitnye Materialy dlya Mikroelektroniki [Magnetic Materials for Microelectronics] (Moscow: Energiya: 1979) (in Russian).
  8. S. I. Yushchuk, S. O. Yuryev, V. I. Bondar, V. I. Nikolaichuk, and S. B. Harambura, Visnyk Derzhavnoho Universytetu 'Lvivs'ka Politekhnika'. Ser. 'Elektronika', No. 513: 153 (2004) (in Ukrainian).
  9. S. I. Yushchuk, S. O. Yuryev, P. S. Kostyuk, and V. I. Nikolaichuk, Pribory i Tekhnika Eksperimenta, No. 5: 118 (2011) (in Russian).
  10. S. I. Yushchuk, S. O. Yuryev, I. R. Zachek, and V. V. Moklyak, Fizyka i Khimiya Tverdoho Tila, 15, No. 3: 643 (2014) (in Ukrainian).
  11. A. Eschenfelder, Fizika i Tekhnika Tsilindricheskikh Magnitnykh Domenov [Physics and Technology of Cylindrical Magnetic Domains] (Moscow: Mir: 1983) (Russian translation).