Issues »  Volume 41, Issue 5

Superconducting Hybrid Heterostructures MoRe–Si(W)–MoRe and Charge Transport Through Localized States in the Barrier

V. Ye. Shaternik$^{1}$, A. P. Shapovalov$^{2}$, O. Yu. Suvorov$^{1}$

$^{1}$G. V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine
$^{2}$V. M. Bakul Institute for Superhard Materials, NAS of Ukraine, 2 Avtozavods’ka Str., UA-04074 Kyiv, Ukraine

Received: 05.11.2018. Download: PDF

The paper presents the results of a study of charge transport in superconducting MoRe–Si(W)–MoRe heterostructures with a hybrid barrier formed by a semiconductor layer with metal clusters. In a case of low content of tungsten in the barrier, the current-voltage characteristics of the heterostructure are determined by the charge-transport contributions from both tunnelling processes and Andreev reflections of carriers. In a case of increased tungsten content in the barrier, superconducting currents arise in the heterostructures simultaneously due to Andreev reflections of carriers at the interfaces and by resonance-percolation charge transport through the barriers.

Key words: hybrid superconducting heterostructures, Josephson junction, one-dimensional transport, resonant tunnelling, resonance-percolation transport.

URL: http://mfint.imp.kiev.ua/en/abstract/v41/i05/0565.html

DOI: https://doi.org/10.15407/mfint.41.05.0565

PACS: 73.23.Hk, 73.30.+y, 74.45.+c, 74.50.+r, 74.55.+v, 74.81.Fa

Citation: V. Ye. Shaternik, A. P. Shapovalov, and O. Yu. Suvorov, Superconducting Hybrid Heterostructures MoRe–Si(W)–MoRe and Charge Transport Through Localized States in the Barrier, Metallofiz. Noveishie Tekhnol., 41, No. 5: 565—582 (2019) (in Ukrainian)

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