Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films
M. Ohtsuka$^{1}$, R. Sergiienko$^{2}$, S. Petrovska$^{3}$, B. Ilkiv$^{3}$, T. Nakamura$^{1}$
$^{1}$Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2 Chome-1-1 Katahira, Aoba Ward, Sendai, Miyagi 980-0812, Japan
$^{2}$Physico-Technological Institute of Metals and Alloys, NAS of Ukraine, 34/1 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine
$^{3}$I. M. Frantsevich Institute for Problems in Materials Science, NAS of Ukraine, 3 Academician Krzhyzhanovsky Str., UA-03142 Kyiv, Ukraine
Received: 22.10.2018; final version - 12.02.2019. Download: PDF
Iron-doped indium-tin oxide (ITO) thin films with reduced to 50% mass indium oxide content are deposited onto glass substrates preheated at 523 K by co-sputtering of ITO and Fe$_2$O$_3$ targets in mixed argon-oxygen atmosphere. The influence of different radio frequency (RF) plasma power for deposition of Fe$_2$O$_3$ target on the electrical, optical, structural, and morphological properties of the films is investigated by means of four point probe, Ultraviolet–Visible–Infrared (UV–Vis–IR) spectroscopy, X-ray diffraction and atomic force microscopy methods. The volume resistivity of 930 $\mu\Omega\cdot$cm and transmittance over 85% are obtained for thin films sputtered under optimum conditions. Iron doping results in significant improvement in films transmittance and increasing the crystallization temperature of ITO thin films.
Key words: iron-doped indium-tin oxide, electrical properties, optical properties, magnetron direct current sputtering, radio frequency deposition.
URL: http://mfint.imp.kiev.ua/en/abstract/v41/i07/0941.html
DOI: https://doi.org/10.15407/mfint.41.07.0941
PACS: 61.05.cp, 68.37.Ps, 68.55.J-, 73.61.At, 78.66.Bz, 81.15.Cd
Citation: M. Ohtsuka, R. Sergiienko, S. Petrovska, B. Ilkiv, and T. Nakamura, Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films, Metallofiz. Noveishie Tekhnol., 41, No. 7: 941—952 (2019)