Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films

Issues » Volume 41, Issue 7

M. Ohtsuka $^{1}$ , R. Sergiienko $^{2}$ , S. Petrovska $^{3}$ , B. Ilkiv $^{3}$ , T. Nakamura $^{1}$

$^{1}$ Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2 Chome-1-1 Katahira, Aoba Ward, Sendai, Miyagi 980-0812, Japan
$^{2}$ Physico-Technological Institute of Metals and Alloys, NAS of Ukraine, 34/1 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine
$^{3}$ I. M. Frantsevich Institute for Problems in Materials Science, NAS of Ukraine, 3 Academician Krzhyzhanovsky Str., UA-03142 Kyiv, Ukraine

Received: 22.10.2018; final version - 12.02.2019. Download: PDF

Iron-doped indium-tin oxide (ITO) thin films with reduced to 50% mass indium oxide content are deposited onto glass substrates preheated at 523 K by co-sputtering of ITO and Fe $_2$ O $_3$ targets in mixed argon-oxygen atmosphere. The influence of different radio frequency (RF) plasma power for deposition of Fe $_2$ O $_3$ target on the electrical, optical, structural, and morphological properties of the films is investigated by means of four point probe, Ultraviolet–Visible–Infrared (UV–Vis–IR) spectroscopy, X-ray diffraction and atomic force microscopy methods. The volume resistivity of 930 $\mu\Omega\cdot$ cm and transmittance over 85% are obtained for thin films sputtered under optimum conditions. Iron doping results in significant improvement in films transmittance and increasing the crystallization temperature of ITO thin films.

Key words: iron-doped indium-tin oxide, electrical properties, optical properties, magnetron direct current sputtering, radio frequency deposition.

URL: http://mfint.imp.kiev.ua/en/abstract/v41/i07/0941.html

DOI: https://doi.org/10.15407/mfint.41.07.0941

PACS: 61.05.cp, 68.37.Ps, 68.55.J-, 73.61.At, 78.66.Bz, 81.15.Cd

Citation: M. Ohtsuka, R. Sergiienko, S. Petrovska, B. Ilkiv, and T. Nakamura, Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films, Metallofiz. Noveishie Tekhnol., 41, No. 7: 941—952 (2019)

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