Issues »  Volume 41, Issue 10

Indium Deposited Nanosystem Formation on InSe (0001) Surface Applied as Template

P. V. Galiy$^{1}$, T. M. Nenchuk$^{1}$, A. Ciszewski$^{2}$, P. Mazur$^{2}$, Ya. M. Buzhuk$^{1}$, Z. M. Lubun$^{1}$, O. R. Dveriy$^{3}$

$^{1}$Ivan Franko National University of Lviv, 1 Universytets’ka Str., UA-79000 Lviv, Ukraine
$^{2}$University of Wrocław, Institute of Experimental Physics, 9 Maxa Borna Plac, 50—204 Wrocław, Poland
$^{3}$Hetman Petro Sahaidachnyi National Army Academy, 32 Heroes of Maidan Str., 79026 Lviv, Ukraine

Received: 10.06.2019. Download: PDF

Surface of two-dimensional InSe layered semiconductor crystal is applied as template for directed assembly of indium nanostructures. The study of In/(0001)InSe surface nanosystem formation is conducted using scanning tunnelling microscopy data. Indium is thermally deposited on structurally perfect InSe crystal cleavages obtained in ultra-high vacuum experimental conditions. It is able to achieve the formation of nanosized triangular shaped structures in a result of the solid state dewetting process by surface heating above the indium melting point. Moreover, the spatial arrangement of such nanostructures is powered by hexagonal lattice symmetry of InSe surface.

Key words: scanning tunnelling microscopy, low energy electron diffraction, layered crystals, indium selenide, nanostructures template directed assembly, hetero-nanostructures.

URL: http://mfint.imp.kiev.ua/en/abstract/v41/i10/1395.html

DOI: https://doi.org/10.15407/mfint.41.10.1395

PACS: 68.35.Ct, 68.37.Ef, 68.47.De, 68.47.Fg, 68.65.-k, 73.20.At, 81.16.Dn

Citation: P. V. Galiy, T. M. Nenchuk, A. Ciszewski, P. Mazur, Ya. M. Buzhuk, Z. M. Lubun, and O. R. Dveriy, Indium Deposited Nanosystem Formation on InSe (0001) Surface Applied as Template, Metallofiz. Noveishie Tekhnol., 41, No. 10: 1395—1405 (2019) (in Ukrainian)

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