Impact of Carbon on Properties of Metal–Semiconductor Contact

V. O. Burlakov, O. E. Pogorelov, O. V. Filatov

G. V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine

Received: 20.03.2020; final version - 01.04.2020. Download: PDF

The effect of a carbon dopant introduction into iron nanofilm on the electrical properties of a metal–semiconductor system is considered. The objects of study are the samples on a $p$- and $n$-types semiconductor substrates of 16 contacts with a diameter of 2 mm and a thickness of up to 100 nm, eight of which are from pure iron and eight—from iron doped with carbon. As shown, for doped iron on the $n$-type substrate, a rectifying contact such as a Schottky diode occurs, which is associated with an increase in the work function of the metal. The height of a potential barrier arising due to this increase in the work function is calculated. The results obtained in the calculation explain the appearance of a region with negative differential resistance on the current–voltage characteristics of the Fe$\backslash$MgO$\backslash$Fe system when one layer of a ferromagnet is doped with carbon.

Key words: dopant, carbon doping, Schottky diode, work function, ferromagnetic, semiconductor.



PACS: 71.20.Be, 73.30.+y, 73.40.Ns, 73.40.Sx, 75.50.Bb, 85.30.Hi

Citation: V. O. Burlakov, O. E. Pogorelov, and O. V. Filatov, Impact of Carbon on Properties of Metal–Semiconductor Contact, Metallofiz. Noveishie Tekhnol., 42, No. 9: 1207—1215 (2020) (in Ukrainian)

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