High-Resolution X-Ray Diffractometry of Crystalline Compounds with Developed Dislocation Structure
I. M. Fodchuk$^{1}$, A. R. Kuzmin$^{1}$, I. I. Gutsuliak$^{1}$, M. S. Solodkyi$^{1}$, O. L. Maslyanchuk$^{1}$, Yu. T. Roman$^{1}$, V. P. Kladko$^{2}$, O. Yo. Gudymenko$^{2}$, V. B. Molodkin$^{3}$, V. V. Lizunov$^{3}$
$^{1}$Yuriy Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., UA-58012 Chernivtsi, Ukraine
$^{2}$V. E. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Ave., UA-03028 Kyiv, Ukraine
$^{3}$G. V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine
Received: 16.06.2021. Download: PDF
Structural defects of crystalline compounds affect the performance of devices based on such materials. A dislocation structure simulation method for crystalline compounds with intermediate values of dislocation densities is proposed (∼10$^{5}$–10$^{6}$ cm$^{−2}$). The influence of various defects on shape of diffuse and coherent components of intensity distributions of X-ray scattering is shown. Probable dislocation reactions are considered at block boundaries and inside of crystals. Possible dislocation system as the set of complete 60°-dislocations and partial dislocations is investigated based on Krivoglaz kinematic theory with use of Monte Carlo method.
Key words: crystalline compounds, high-resolution X-ray diffractometry, defect structure, Monte Carlo method, rocking curves, reciprocal space maps.
URL: https://mfint.imp.kiev.ua/en/abstract/v43/i10/1289.html
DOI: https://doi.org/10.15407/mfint.43.10.1289
PACS: 07.85.-m, 61.05.cc, 61.72.Lk, 61.72.Mm
Citation: I. M. Fodchuk, A. R. Kuzmin, I. I. Gutsuliak, M. S. Solodkyi, O. L. Maslyanchuk, Yu. T. Roman, V. P. Kladko, O. Yo. Gudymenko, V. B. Molodkin, and V. V. Lizunov, High-Resolution X-Ray Diffractometry of Crystalline Compounds with Developed Dislocation Structure, Metallofiz. Noveishie Tekhnol., 43, No. 10: 1289—1304 (2021) (in Ukrainian)