Thermal and Ion Treatment Effect on Nanoscale Thin Films Scratch Resistance
V. Yanchuk$^{1}$, I. Kruhlov$^{1}$, V. Zakiev$^{1,2}$, A. Lozova$^{1}$, B. Trembach$^{3}$, A. Orlov$^{1}$, S. Voloshko$^{1}$
$^{1}$National Technical University of Ukraine ‘Igor Sikorsky Kyiv Polytechnic Institute’, 37 Peremohy Ave., UA-03056 Kyiv, Ukraine
$^{2}$National Aviation University, 1 Lyubomyr Huzar Ave., UA-03058 Kyiv, Ukraine
$^{3}$Private Joint Stock Company ‘Novokramatorsky Mashinostroitelny Zavod’, 5 Oleksa Tikhoy Str., UA-84305 Kramatorsk, Ukraine
Received: 28.07.2022; final version - 11.08.2022. Download: PDF
In this study, a microtribological characteristics of Ni(25 nm)/Cu(25 nm)/ Cr(25 nm) three-layer thin films fabricated using DC magnetron sputtering are explored using progressive scratch test. Four various types of thin films are examined and compared: as-deposited film, film after low-energy Ar$^{+}$ ion irradiation, film annealed at 450°С for 15 minutes in vacuum, and film after ion irradiation followed by vacuum annealing. Scratch tests are supplemented by structural (XRD) and chemical (AES) experimental studies. As figured out, the sample after ion irradiation followed by annealing demonstrated the best microtribological and wear resistance characteristics among all studied films. The highest scratch resistance, smooth scratch shape, the lowest value of peak tangential force as well as the absence of side cracks and film delamination are revealed for the sample after irradiation followed by annealing. The likely reasons of this behaviour are discussed.
Key words: thermal and ion treatment, thin films, scratch resistance, microtribological resistance, scratch test.
URL: https://mfint.imp.kiev.ua/en/abstract/v44/i10/1275.html
DOI: https://doi.org/10.15407/mfint.44.10.1275
PACS: 07.10.-h, 68.35.Fx, 68.35.Rh, 68.55.Ln, 81.40.-z
Citation: V. Yanchuk, I. Kruhlov, V. Zakiev, A. Lozova, B. Trembach, A. Orlov, and S. Voloshko, Thermal and Ion Treatment Effect on Nanoscale Thin Films Scratch Resistance, Metallofiz. Noveishie Tekhnol., 44, No. 10: 1275—1292 (2022)