Magnetic-Field-Stimulated Modification of Surface Charge and Defect Content in Silicon for Solar Energy Storage

V. А. Makara, L. P. Steblenko, О. A. Korotchenkov, А. B. Nadtochiy, D. V. Kalinichenko, А. М. Kuryliuk, Yu. L. Kobzar, О. М. Krit

Taras Shevchenko National University of Kyiv, 64 Volodymyrska Str., 01601 Kyiv, Ukraine

Received: 23.04.2013. Download: PDF

The effect of a weak static magnetic field on the structure and charge state of silicon for solar energy storage is investigated. As found, the magnetic-field-stimulated changes in the defect—impurity state and surface potential are reversible.

Key words: ‘solar’ silicon, impurities, magnetic field, surface potential, carrier recombination time.

URL: http://mfint.imp.kiev.ua/en/abstract/v36/i02/0189.html

DOI: https://doi.org/10.15407/mfint.36.02.0189

PACS: 61.72.Bb, 61.72.Cc, 61.72.Dd, 61.72.Hh, 66.30.Dn

Citation: V. А. Makara, L. P. Steblenko, О. A. Korotchenkov, А. B. Nadtochiy, D. V. Kalinichenko, А. М. Kuryliuk, Yu. L. Kobzar, and О. М. Krit, Magnetic-Field-Stimulated Modification of Surface Charge and Defect Content in Silicon for Solar Energy Storage, Metallofiz. Noveishie Tekhnol., 36, No. 2: 189—193 (2014)


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