Issues »  Volume 36, Issue 2

Magnetic-Field-Stimulated Modification of Surface Charge and Defect Content in Silicon for Solar Energy Storage

V. А. Makara, L. P. Steblenko, О. A. Korotchenkov, А. B. Nadtochiy, D. V. Kalinichenko, А. М. Kuryliuk, Yu. L. Kobzar, О. М. Krit

Taras Shevchenko National University of Kyiv, 64 Volodymyrska Str., 01601 Kyiv, Ukraine

Received: 23.04.2013. Download: PDF

The effect of a weak static magnetic field on the structure and charge state of silicon for solar energy storage is investigated. As found, the magnetic-field-stimulated changes in the defect—impurity state and surface potential are reversible.

Key words: ‘solar’ silicon, impurities, magnetic field, surface potential, carrier recombination time.

URL: http://mfint.imp.kiev.ua/en/abstract/v36/i02/0189.html

DOI: https://doi.org/10.15407/mfint.36.02.0189

PACS: 61.72.Bb, 61.72.Cc, 61.72.Dd, 61.72.Hh, 66.30.Dn

Citation: V. А. Makara, L. P. Steblenko, О. A. Korotchenkov, А. B. Nadtochiy, D. V. Kalinichenko, А. М. Kuryliuk, Yu. L. Kobzar, and О. М. Krit, Magnetic-Field-Stimulated Modification of Surface Charge and Defect Content in Silicon for Solar Energy Storage, Metallofiz. Noveishie Tekhnol., 36, No. 2: 189—193 (2014)

REFERENCES
  1. V. I. Al'shits, E. V. Darinskaya, T. M. Perekalina, and A. A. Urusovskaya, Sov. Phys. Solid State, 29: 265 (1987).
  2. Ya. B. Zel'dovich, A. L. Buchachenko, and E. L. Frankevich, Sov. Phys. Uspekhi, 31: 385 (1988). Crossref
  3. V. M. Maslovskii and S. N. Postnikov, Proceedings of the 4th Scientific Technical Seminar on Processing by Pulse Magnetic Field (Methods and Technology) (Gorky, Sofia: 1989), p. 5.
  4. V. N. Buzykin, O. I. Datsko, and S. N. Postnikov, Elektron. Obrab. Mater., 2: 16 (1993) (in Russian).
  5. M. N. Levin and B. A. Zon, Zh. Exp. Teor. Fiz., 84, 760 (1997) (in Russian).
  6. M. N. Levin, G. V. Semenova, and T. P. Sushkova, Phys. Solid State, 45: 639 (2003). Crossref
  7. M. N. Levin, A. V. Tatarintsev, O. A. Kostsov, and A. M. Kostsov, Tech. Phys., 48: 1304 (2003). Crossref
  8. Yu. I. Golovin, Phys. Solid State, 46: 789 (2004). Crossref
  9. R. B. Morgunov, Phys. Uspekhi, 47: 125 (2004). Crossref
  10. A. L. Buchachenko, JETP, 105: 593 (2007). Crossref
  11. V. A. Makara, L. P. Steblenko, A. M. Korduban, O. V. Matveeva, A. N. Kuryliuk, S. N. Naumenko, Yu. L. Kolchenko, and G. V. Vesna, Materials and Structures of Modern Electronics (Minsk: 2006), p. 189 (in Russian).
  12. V. A. Makara, M. A. Vasiliev, L. P. Steblenko, O. V. Koplak, A. N. Kuryliuk, Yu. L. Kobzar, and S. N. Naumenko, Semiconductors, 42: 1044 (2008). Crossref
  13. V. A. Makara, O. A. Korotchenkov, L. P. Steblenko, A. A. Podolyan, and D. V. Kalinichenko, Semiconductors, 47, No. 5: 652 (2013). Crossref
  14. A. Podolian, V. Kozachenko, A. Nadtochiy, N. Borovoy, and O. Korotchenkov, J. Appl. Phys., 107: 093706 (2010). Crossref
  15. A. B. Nadtochy, O. A. Korotchenkov, and V. V. Kuryliuk, Zhurnal Tekhnicheskoi Fiziki, 83, No. 3: 84 (2013) (in Russian).
  16. V. S. Vavilov, Defects in Silicon and on Its Surface (Moscow: Nauka: 1990) (in Russian).

© 2013–2017 "G.V. Kurdyumov Institute for Metal Physics"