Photoplastic Effect in Narrow-Gap Mercury Chalcogenide Crystals
B. P. Koman$^{1}$, O. O. Balitskii$^{1}$, D. S. Leonov$^{2}$
$^{1}$Ivan Franko National University of Lviv, 1 Universytetska Str., UA-79000 Lviv, Ukraine
$^{2}$Technical Centre, NAS of Ukraine, 13 Pokrovs’ka Str., 04070 Kyiv, Ukraine
Received: 21.03.2018. Download: PDF
The paper elucidates the peculiarities of photoplasticization effect (PPE) occurring in narrow-gap crystals of mercury chalcogenides illuminated by white light during the process of uniaxial deformation. As found, the irradiation has an influence on the plastic deformation in narrow-gap Cd$_{x}$Hg$_{1-x}$Te crystals. Negative photoplasticization effect (NPPE) described here is concerned with reducing of plastic stress fluidity under white-light irradiation during plastic deformation of crystals at a constant rate. As found, in contrary to wide-bandgap crystals of the II–VI groups exhibiting positive PPE, NPPE observed in Cd$_{x}$Hg$_{1-x}$Te occurs without internal photoeffect. A model explaining the nature of NPPE relies on a decreasing of positive charge in a native oxide layer at the surface of crystal. Charge decreasing reduces potential barrier for exiting on surface of dislocations generated by near-surface sources during dynamical loading. As a result, the level of fluidity stress in the deformed crystal is reduced.
Key words: photoplasticization effect, narrow-gap semiconductor, mercury chalcogenides, dislocations, deformation.
URL: http://mfint.imp.kiev.ua/en/abstract/v40/i04/0529.html
DOI: https://doi.org/10.15407/mfint.40.04.0529
PACS: 61.72.Lk, 61.80.Ba, 61.82.Fk, 62.20.fq, 81.40.Lm, 81.40.Wx, 83.60.Np
Citation: B. P. Koman, O. O. Balitskii, and D. S. Leonov, Photoplastic Effect in Narrow-Gap Mercury Chalcogenide Crystals, Metallofiz. Noveishie Tekhnol., 40, No. 4: 529—540 (2018)